کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783982 | 1512026 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and structural study of Ge/Si quantum dots on Si(1Â 0Â 0) surface covered with a thin silicon oxide layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical and structural study of Ge/Si quantum dots on Si(1Â 0Â 0) surface covered with a thin silicon oxide layer Optical and structural study of Ge/Si quantum dots on Si(1Â 0Â 0) surface covered with a thin silicon oxide layer](/preview/png/9783982.png)
چکیده انگلیسی
The formation of Ge quantum dots (QDs) grown on an ultrathin interlayer of SiO2 on top of a Si(1Â 0Â 0) substrate was investigated, as a function of the thicknesses of the SiO2 interlayer (0.5, 0.75 or 1 monolayer (ML)) and the Ge layer (0.3, 0.6 or 0.9Â nm). The structural characterization was performed by Rutherford backscattering spectroscopy (RBS). Photoluminescence (PL) studies were done to characterize the optical behavior of all samples. Hydrogen treatment was performed in order to passivate non-radiative recombination channels, thus enhancing the PL intensity. The results suggest the formation of Ge nanoislands (quantum dots, QDs), for the sample with 1Â ML of SiO2 and 0.9Â nm of Ge, and exclude their formation for samples with lower SiO2 and Ge layer thicknesses. We also observe an influence of the SiO2 interlayer thickness in the QDs formation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 462-465
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 462-465
نویسندگان
A. Fonseca, E. Alves, J.P. Leitão, N.A. Sobolev, M.C. Carmo, A.I. Nikiforov,