کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9783998 1512027 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm
چکیده انگلیسی
Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 121, Issues 1–2, 25 July 2005, Pages 60-63
نویسندگان
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