کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9784054 | 1512028 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of irradiation on the switching behavior in PZT thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of irradiation on the switching behavior in PZT thin films Influence of irradiation on the switching behavior in PZT thin films](/preview/png/9784054.png)
چکیده انگلیسی
Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol-gel Pb(Zr,Ti)O3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (1Â 1Â 1)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 120, Issues 1â3, 15 July 2005, Pages 141-145
Journal: Materials Science and Engineering: B - Volume 120, Issues 1â3, 15 July 2005, Pages 141-145
نویسندگان
I. Baturin, N. Menou, V. Shur, C. Muller, D. Kuznetsov, J.-L. Hodeau, A. Sternberg,