Recent developments in the MOCVD and ALD of rare earth oxides and silicates

Lanthanide, or rare-earth oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-κ dielectric oxides and in this paper some of our recent research into the MOCVD and ALD of PrOx, La2O3, Gd2O3, Nd2O3 and their related silicates are reviewed.