کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9784118 | 1512029 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect](/preview/png/9784118.png)
چکیده انگلیسی
We study the switching fatigue behaviors of ferroelectric layered-perovskite oxide films, including SrBi2Ta2O9, Bi3.15Nd0.85Ti3O12 and Bi3.25La0.75Ti3O12 deposited on Pt/TiO2/SiO2/Si substrates, at various temperatures. It is found that the damaged ferroelectric polarization and dielectric response in the fatigued films can be easily rejuvenated under a high external electric field, for which the localization of the defect and charge accumulation is argued to be responsible. It is proposed that the probability of fatigue rejuvenation can be characterized by the kinetics of domain wall pinning and depinning which depends on the stability of perovskite-like slabs against defect/charge diffusion and/or the self-regulation of the (Bi2O2)2+ layer to compensate for space charges.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 118, Issues 1â3, 25 April 2005, Pages 225-228
Journal: Materials Science and Engineering: B - Volume 118, Issues 1â3, 25 April 2005, Pages 225-228
نویسندگان
G.L. Yuan, J.-M. Liu, K. Baba-Kishi, H.L.W. Chan, C.L. Choy, D. Wu,