Fluorine-free and fluorine containing MOCVD precursors for electronic oxides: a comparison

Homogeneous films have been deposited on Pt/TiN/SiO2/Si substrates in the 300-500 °C temperature range. XRD and XPS analyses have shown that fluorine or carbonate containing films are obtained adopting Sr(hfac)2tetraglyme or Sr(dpm)2pmdeta, respectively.