کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9792757 | 1513678 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon nanostructures from electroless electrochemical etching
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
شیمی مواد
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Recent advances in the production of Si nanostructures from electroless etching are reviewed, including stain etching, metal-assisted etching and chemical vapour etching. A brief review of the explosion in applications of porous silicon over the past 18 months is also given. The stain film that results from the etching of (poly- or single-)crystalline Si is composed of a porous network of nanocrystalline silicon. Few mechanistic studies of electroless etching have been performed, but the more extensively studied anodic etching of silicon in fluoride solutions provides many clues as to how porous films are formed. Intriguing recent results have shown that control over the properties of the film can be obtained by exercising control over the composition of the etchant.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Opinion in Solid State and Materials Science - Volume 9, Issues 1â2, FebruaryâApril 2005, Pages 73-83
Journal: Current Opinion in Solid State and Materials Science - Volume 9, Issues 1â2, FebruaryâApril 2005, Pages 73-83
نویسندگان
Kurt W. Kolasinski,