کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9795575 | 1514931 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transmission electron microscopy analysis of grain boundary precipitate-free-zones (PFZs) in an AlCuSiGe alloy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We have characterized the elevated temperature (190 °C) precipitation sequence near the grain boundaries of an AlCuSiGe alloy, comparing these results to the binary AlCu and the ternary AlSiGe. In the quaternary alloy, there is a graded microstructure that evolves with increasing distance from the boundaries, which is generally a superposition of the precipitate-free-zones (PFZs) in the binary AlCu and in the ternary AlSiGe. After aging for 3 h, this graded area consists of an approximately 140 nm wide region that is entirely precipitate free, followed by a 400 nm wide region that is denuded of Si-Ge and θⲠprecipitates. Rather than containing the (Si-Ge)-θⲠpairs observed in the bulk, this 400 nm wide region contains only homogeneously nucleated θâ²â². Only in the overaged condition (144 h) are the near grain boundary θâ²â² replaced by a coarse distribution of large plate-like θâ². In the alloys, the solute depleted zones are much narrower than the total length of the PFZ. For example, in both AlCu and AlCuSiGe, the Cu depleted zone is only 30 nm wide. This underscores the need for vacancies during precipitation of not only θⲠand Si-Ge, but of θâ²â² as well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 412, Issues 1â2, 5 December 2005, Pages 204-213
Journal: Materials Science and Engineering: A - Volume 412, Issues 1â2, 5 December 2005, Pages 204-213
نویسندگان
A. Tolley, D. Mitlin, V. Radmilovic, U. Dahmen,