کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9796410 | 1514946 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of 1Â keV Ar+ irradiation on the residual strength of PE fiber-reinforced composites
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this study, polyethylene fibers were surface-modified by Ar+ ion irradiation under oxygen environment. In order to determine optimal Ar+ ion dose, the surface modification was carried out at different Ar+ ion doses. The ion doses used were 5Â ÃÂ 1015, 1Â ÃÂ 1016, 5Â ÃÂ 1016 and 1Â ÃÂ 1017Â ions/cm2. The optimal Ar+ ion dose in the modification of polyethylene fibers was determined by measuring the tensile modulus and strength of polyethylene fiber/vinylester composite as a function of ion dose. Fatigue tests were performed to determine the effect of surface modification on the residual strength of polyethylene fiber/vinylester composite. The results showed that the tensile modulus and strength were maximized when the fibers were surface-modified at ion doses of 1Â ÃÂ 1016Â ions/cm2. The results also showed that the residual strength was significantly improved by the surface modification. The effect of surface modification on the residual strength was more evident as the fatigue cycle increased. Scanning electron microscope (SEM) examination showed that the improvement of residual strength of surface-modified polyethylene fiber/vinylester composite was attributed to the increased adhesion between polyethylene fibers and vinylester resin. X-ray photoelectron spectrometry (XPS) analysis showed that the C=O functional group plays an important role in enhancing the adhesion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 395, Issues 1â2, 25 March 2005, Pages 288-294
Journal: Materials Science and Engineering: A - Volume 395, Issues 1â2, 25 March 2005, Pages 288-294
نویسندگان
K.Y. Rhee, J.H. Choi, S.J. Park,