کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9801353 | 1515480 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Utilization of Si atomic steps for Cu nanowire fabrication
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Techniques for controlling atomic step position at low-temperature and selective growth of Cu nanowires along the atomic step edges have been studied. By immersing the Si(111) substrates with well-defined step/terrace surfaces in the Cu-contained water with the dissolved oxygen content of less than 1Â ppb, selective growth of Cu nanowires along the step edges was successfully achieved. Total reflection X-ray fluorescence spectroscopy (TXRF) revealed that the fabricated nanowires were composed of mono-atomic Cu rows. For step position control, the characteristics of step-flow pinning effect of SiO2 films were investigated. Fine SiO2 line patterns drawn by anodic oxidation using AFM probes enable us to obtain the step-free Si areas predetermined by the patterns.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 6, September 2005, Pages 667-670
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 6, September 2005, Pages 667-670
نویسندگان
Ryu Hasunuma, Takanobu Yada, Junichi Okamoto, Daisuke Hojo, Norio Tokuda, Kikuo Yamabe,