Transport properties of C60 thin film FETs with a channel of several-hundred nanometers

We report the transport properties of C60 thin film field-effect transistors (FETs) with a channel of several-hundred nanometers. Asymmetrical drain current ID versus source-drain voltage VDS characteristics were observed. This phenomenon could be explained in terms of the high contact-resistance between the C60 thin film and the source/drain electrodes. This device showed a current on/off ratio >105.