کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9801973 | 1515736 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Confinement of polar optical phonons in AlN/GaN superlattices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We study the optical-phonon spectra in heterojunctions fabricated from III to V nitride materials (GaN and AlN). We are concerned with the quaternary superlattice structure, namely, /substrate/AlN/AlxGa1âxN/GaN/AlxGa1âxN/â¦/, where the substrate is here considered to be a transparent dielectric medium like sapphire. We make use of a model based on the Frölich Hamiltonian, taking into account the macroscopic theory developed by Loudon, known as the continuum dielectric model. The optical-phonon modes are modelled considering only the electromagnetic boundary conditions (including retardation effects), in the absence of charge transfer between ions. Numerical results of the confined optical-phonon spectra are presented, characterizing three distinct optical-phonon classes designated as propagate (PR), interface (IF) and half-space (HS) modes. Furthermore, due to the dielectric anisotropy presented in the nitrides, some additional peculiarities will be presented, like dispersive confined modes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 135, Issues 1â2, July 2005, Pages 144-149
Journal: Solid State Communications - Volume 135, Issues 1â2, July 2005, Pages 144-149
نویسندگان
S.K. Medeiros, E.L. Albuquerque, G.A. Farias, M.S. Vasconcelos, D.H.A.L. Anselmo,