کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817520 | 1518767 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of ablation plasma ion implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of ablation plasma ion implantation Characterization of ablation plasma ion implantation](/preview/png/9817520.png)
چکیده انگلیسی
We report on the ion implantation by a new laser ion source (LIS). It is able to accelerate plasma ions towards substrates by means of a polarized accelerating gap. A pulsed excimer laser, KrF, was utilized in producing plasma by target ablation. A laser pulse energy of 70Â mJ was focused onto different solid targets by a 15Â cm focal length lens, obtaining an irradiance of about 3.5Â ÃÂ 108Â W/cm2. To overcome plasma effects, such as arcs, usually occurring during the extraction phase, an expanding chamber with a hole in its end, was developed. To realize implantations, Si substrates were placed in front of the ions extracted by the plasma. The implanted samples were characterized by Rutherford backscattering spectroscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and laser ablation combined to inductively coupled plasma mass spectrometry. Implantations of Al, Cu and Ge were achieved up to 80Â nm at a relatively low accelerating voltage, 40Â kV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1â2, October 2005, Pages 36-39
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1â2, October 2005, Pages 36-39
نویسندگان
F. Belloni, D. Doria, A. Lorusso, V. Nassisi, L. Torrisi, L. Calcagnile, G. Quarta, D. Bleiner, D. Manno,