کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9817560 1518767 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Swift heavy ion beam induced recrystallization of amorphous Si layers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Swift heavy ion beam induced recrystallization of amorphous Si layers
چکیده انگلیسی
This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag7+) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conventional solid phase epitaxial growth. A systematic planar recrystallization has been observed as a function of temperature giving rise to an activation energy of 0.25 ± 0.02 eV. A possible mechanism of recrystallization is discussed on the basis of the production of vacancies along the track of the swift heavy ion and their migration at elevated temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1–2, October 2005, Pages 239-244
نویسندگان
, , , ,