کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817560 | 1518767 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Swift heavy ion beam induced recrystallization of amorphous Si layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
This paper focuses on the role of electronic energy loss in ion beam induced epitaxial crystallization for which swift heavy ions (100 MeV Ag7+) have been used. We observed good epitaxial crystallization at 473-623 K, which is a much lower temperature regime as compared to the one needed for conventional solid phase epitaxial growth. A systematic planar recrystallization has been observed as a function of temperature giving rise to an activation energy of 0.25 ± 0.02 eV. A possible mechanism of recrystallization is discussed on the basis of the production of vacancies along the track of the swift heavy ion and their migration at elevated temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1â2, October 2005, Pages 239-244
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1â2, October 2005, Pages 239-244
نویسندگان
P.K. Sahoo, T. Som, D. Kanjilal, V.N. Kulkarni,