Light-ion beam for microelectronic applications

In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (λ = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10°, 25° and 50°). In a second part of the paper, ion beam induced charges study has been carried out, with a 2 MeV 4He+ micro-beam, on metal-semiconductor-metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes.