کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817586 | 1518767 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ion beam analysis of CdTe nuclear detector contact grown by electroless process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Ion beam analysis was performed on CdTe(II-VI) semiconductor materials in order to characterize metal contacts, namely Pt, deposited by electroless process. It is essential to perform such a material which can provide high detection quality that needs good deposited metal contact as thick as possible. Rutherford Backscattering Spectrometry was used to determine the thickness and the stoichiometry of the layers formed at the surface. The depth profiles of Pt, Cd, Te and O were determined as a function of the dilution solution and the pH parameters which seemed to be determinant factors in the Pt layer deposition process. The distribution of Cd deficiency at the interface layers was profiled using simulations and showed complex profiles in the samples, which can greatly influence the electrical quality of detectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1â2, October 2005, Pages 386-390
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1â2, October 2005, Pages 386-390
نویسندگان
M. Roumié, K. Zahraman, B. Nsouli, F. Lmai, A. Zaiour, M. Hage-Ali, M. Ayoub, M. Sowinska,