Synchrotron radiation-excited etching of ZnTe using Ar gas

Dependence of the synchrotron light-excited etching of ZnTe on the pressure has been investigated. Ar gas was used as an etching gas, and the ZnTe sample was negatively biased against the reaction chamber. The etching rate increases with increasing the pressure, and the maximum etching rate of 16.7 nm/A min has been achieved. In order to discuss the etching mechanism, the wavelength dependence of the etching properties was examined using a LiF window.