کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817664 | 1518769 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
EXAFS comparison of crystalline/continuous and amorphous/porous GaSb
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: EXAFS comparison of crystalline/continuous and amorphous/porous GaSb EXAFS comparison of crystalline/continuous and amorphous/porous GaSb](/preview/png/9817664.png)
چکیده انگلیسی
Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15Â nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 238, Issues 1â4, August 2005, Pages 264-267
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 238, Issues 1â4, August 2005, Pages 264-267
نویسندگان
S.M. Kluth, B. Johannessen, P. Kluth, C.J. Glover, G.J. Foran, M.C. Ridgway,