کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817669 | 1518769 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Au and Cu nanocrystals (NCs) fabricated by ion implantation into thin SiO2 and annealing were investigated by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy (TEM). In particular, the EXAFS Debye-Waller (D-W) factor is studied as a function of the annealing temperature. An increased D-W factor was observed for annealing temperatures 500 °C and 800 °C with respect to samples as implanted and annealed at 1100 °C. A possible explanation for this behavior could be stress induced plastic deformation due to the different thermal expansion of the metals and the SiO2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 238, Issues 1â4, August 2005, Pages 285-289
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 238, Issues 1â4, August 2005, Pages 285-289
نویسندگان
P. Kluth, B. Johannessen, C.J. Glover, G.J. Foran, M.C. Ridgway,