Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs

CdSe quantum dots (QDs) were synthesized by ion-implanting constituent atoms in SiO2, thermally grown on Si-wafer. The influence of implantation and post-implantation treatment parameters was studied by grazing incidence small angle scattering of X-rays (GISAXS). The effect of stoichiometry deviations was analyzed for various Cd:Se ratios in the range of 0.75-1.95. The best correlated ensemble of QDs in implanted layer was found for 1.33 and 1.1 Cd:Se ratios, and 30 s post-implant annealing at 700 °C. These findings were related with the amount of well-crystallized CdSe QDs, as found by Raman scattering.