کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817723 | 1518771 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dopant profiling of ultra shallow As implanted in Si with and without spike annealing using medium energy ion scattering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Ultra shallow dopant profiles of arsenic implanted into Si with an energy range from 0.5 to 3Â keV to a dose of 8Â ÃÂ 1014Â ions/cm2 with and without spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing. A recovery of silicon crystal defects induced by arsenic implantation was observed after spike annealing by glancing angle Rutherford back scattering (RBS) measurement with a solid-state detector. The thickness of disordered Si layers down to 1.5Â nm was evaluated from glancing angle RBS measurements for implanted sample before and after spike annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 72-76
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 72-76
نویسندگان
S. Abo, S. Ichihara, T. Lohner, F. Wakaya, T. Eimori, Y. Inoue, M. Takai,