Comparison of elemental boron and boron halide implants into silicon

Rutherford backscattering spectroscopy (RBS) of silicon implanted with BBr2+ to a dose of 1 × 1015 boron atoms cm−2, shows that an amorphous region is created during the implantation. This region fully re-grows after annealing at 1100 °C; lower temperature anneals remove only part of the amorphous layer. RBS channelling shows that a fraction of the bromine takes up substitutional lattice sites upon implantation, and that this fraction increases as the samples are annealed at temperatures above 600 °C with 40% of the B being in substitutional sites after annealing at 1050 °C.