کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817737 | 1518771 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Poly-Si gate engineering for advanced CMOS transistors by germanium implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Poly-Si gate engineering for advanced CMOS transistors by germanium implantation Poly-Si gate engineering for advanced CMOS transistors by germanium implantation](/preview/png/9817737.png)
چکیده انگلیسی
Standard gate materials are compared to Ge implanted poly-Si and deposited poly-SiGe. It is demonstrated in this paper that the electrical resistance of the gate is significantly reduced via the use of poly-SiGe (from 30% to 40% decrease in resistance). Similarly, we show via specific optimization that localized Ge implantation is also suitable to reduce gate resistance. Physical characterizations are performed to determine the “root” causes at the origin of these improvements. In line with future publications showing strong benefits on CMOS device performance, grain size effects seem to be the main mechanisms explaining the measured improvement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 148-154
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 148-154
نویسندگان
H. Bourdon, M. Juhel, B. Oudet, N. Breil, D. Lenoble,