کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9817751 1518771 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation
چکیده انگلیسی
The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30° in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1–2, August 2005, Pages 223-227
نویسندگان
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