کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9817881 1518772 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Making porous membranes by chemical etching of heavy-ion tracks in β-PVDF films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Making porous membranes by chemical etching of heavy-ion tracks in β-PVDF films
چکیده انگلیسی
Production of porous membranes using heavy ion bombardment and subsequent chemical etching of poly(vinylidene difluoride) (PVDF) films has been reported several years ago. However, porous membranes with pore diameter in the nanometer scale requires a better understanding of the chemical etching mechanism. In this work PVDF foils irradiated with Sn ions (2.85 MeV per nucleon) were exposed to several etching conditions which involved permanganate oxidation in different alkaline environments. The solution of KOH 9 mol L−1 and saturated in KMnO4 was the best etching reactant for PVDF. Functional groups created in the alkaline and oxidative attack by permanganate were studied by FT-IR and UV-vis spectroscopy. The spectroscopic data reveals that the formation of pores occurs by a two-step mechanism: (i) double bonds as a result of dehydrofluorination induced by alkaline media and (ii) oxidation of these double bonds in permanganate solution. The etching temperature and time can be attuned to prepare track-etched membrane with a desired pore diameter in the range of few hundred nanometers. Temperatures ranged between 55 °C and 65 °C were optimal to produce cylindrical pores. Temperatures higher than 85 °C induce conical-shaped track-etched pores while temperatures lower than 50 °C slow down the chemical attack. The addition of a phase-transfer agent enhances the chemical attack and allows the decrease of the etching temperature and/or time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 236, Issues 1–4, July 2005, Pages 501-507
نویسندگان
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