کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818095 | 1518776 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influences of the incident He* velocity on metastable de-excitation processes at a Cs-covered Si(1Â 0Â 0) surface
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
With increasing He* velocity, the relative weight of the peak from the decay of He*â(1s2s2) in the spectrum was decreased, which means the auto-detachment process becomes more important than the Auger de-excitation process. The low-energy threshold of the spectrum shifted to higher energies with higher He* velocities. This implies that the surface electronic states are distorted by incident atoms, and, consequently, the surface potential barrier is increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 88-93
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 88-93
نویسندگان
T. Ikari, N. Uchino, S. Nishioka, H. Fujiwaki, K. Yamada, A. Watanabe, M. Naitoh, S. Nishigaki,