کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818118 | 1518776 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Potential sputtering and kinetic sputtering from a water adsorbed Si(1Â 0Â 0) surface with slow highly charged ions
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Potential sputtering and kinetic sputtering from a water adsorbed Si(1Â 0Â 0) surface with slow highly charged ions Potential sputtering and kinetic sputtering from a water adsorbed Si(1Â 0Â 0) surface with slow highly charged ions](/preview/png/9818118.png)
چکیده انگلیسی
We measured charge state dependence and incident angle dependence of sputtering yields and two-dimensional (2D) position distributions for H+, Si+ and SiOH+ ions emitted from a water adsorbed Si(1 0 0) surface irradiated by a few keV Arq+ (q = 4-8). It was found that (1) H+ yield strongly depended on the charge state and increased with increasing incident angle, (2) Si+ and SiOH+ yields were independent of the charge state and increased with increasing incident angle.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 244-248
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 244-248
نویسندگان
N. Okabayashi, K. Komaki, Y. Yamazaki,