کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818136 | 1518776 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of point defects and grain boundaries in advanced materials
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Control of point defects and grain boundaries in advanced materials Control of point defects and grain boundaries in advanced materials](/preview/png/9818136.png)
چکیده انگلیسی
Nickel diffusion in non-doped and Li-doped polycrystalline ZnO was studied to investigate the dominant lattice defect introduced by the reaction of incorporated Li. Li-doped ZnO exhibited new emission at 393Â nm. Li doping increased the Ni lattice diffusion coefficients in ZnO, but its effect on Ni grain boundary diffusion was very small. These results can be understood as Li incorporation in the ZnO lattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 343-347
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 343-347
نویسندگان
Tsubasa Nakagawa, Isao Sakaguchi, Katsuyuki Matsunaga, Takahisa Yamamoto, Hajime Haneda, Yuichi Ikuhara,