Temperature dependent IBIC study of 4H-SiC Schottky diodes

Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for each fixed temperature. The CCE versus V curves were analyzed in terms of the Schockley-Ramo-Gunn theory and the minority carrier (hole) diffusion length was obtained as a function of temperature.