کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9818230 1518777 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Radiation damage microstructures in silicon and application in position sensitive charged particle detection
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Radiation damage microstructures in silicon and application in position sensitive charged particle detection
چکیده انگلیسی
Area selective irradiation using MeV ions having different ranges has been performed in a nuclear microprobe to produce radiation damage microstructures in silicon photodiodes. IBIC (Ion Beam Induced Charge) technique has been used for on line monitoring of radiation damage produced by different fluences of He, Li and O ions of MeV energies. Three-dimensional patterning of radiation damage structures may be used for different applications. By creating a region of constant damage gradient in Si photodiode, position sensitive radiation detection has been demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 231, Issues 1–4, April 2005, Pages 502-506
نویسندگان
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