Dechanneling of electrons by stacking faults - a model quantum mechanical calculation

A quantum mechanical treatment for dechanneling of fast moving electrons by stacking faults is given. One dimensional hydrogen atom model is used for planar potential due to an atomic plane and corresponding bound states in the transverse potential are considered. At the stacking fault boundary, the electrons in these states make transitions for which probabilities have been calculated, using sudden approximation. Some numerical results using mathematica have been presented and applications to channeling radiation problem are briefly discussed.