کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818286 | 1518778 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic mixing at metal-oxide interfaces by high energy heavy ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We study the atomic mixing at metal (Bi or Au)/oxide (SiO2 or Al2O3) interfaces under 150-200Â MeV heavy ion irradiation. Irradiation-induced interface mixing state is examined by means of Rutherford backscattering spectrometry (RBS). For Bi/Al2O3 interfaces, the heavy ion irradiations induce a strong atomic mixing and the amount of the mixing increases with increasing the electronic stopping power for heavy ions. By comparing the results with that for 3Â MeV Si ion irradiation, we conclude that the strong atomic mixing observed at Bi/Al2O3 interfaces is attributed to the high-density electronic excitation. On the other hand, for other interfaces (Bi/SiO2, Au/Al2O3 and Au/SiO2), atomic mixing is rarely observed after the irradiation. The dependence of atomic mixing on combinations of irradiating ions and interface-forming materials is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 230, Issues 1â4, April 2005, Pages 234-239
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 230, Issues 1â4, April 2005, Pages 234-239
نویسندگان
R. Nakatani, R. Taniguchi, Y. Chimi, N. Ishikawa, M. Fukuzumi, Y. Kato, H. Tsuchida, N. Matsunami, A. Iwase,