کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818327 | 1518778 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Total sputtering yields of solids under MeV-energy Si ion bombardment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Total sputtering yields have been measured for SiO2 and Cu targets bombarded with Si ions at an incident energy between 500Â keV and 5.0Â MeV using a quartz crystal microbalance technique. In order to measure total yields accurately, we have developed a beam modulation technique to avoid the effect of thermal drift. In the MeV energy range, an ion penetrates through thin SiO2 and Cu targets and is implanted into a quartz crystal. Therefore, the thickness of these layers deposited on quartz crystals was carefully controlled to avoid damage of quartz crystal by incident ions. As a result, total sputtering yields of SiO2 increased with incident Si ion energy, while those of the Cu target decreased. The total yields of the SiO2 target were represented well by a power low of the electronic stopping power.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 230, Issues 1â4, April 2005, Pages 483-488
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 230, Issues 1â4, April 2005, Pages 483-488
نویسندگان
Satoshi Ninomiya, Chikage Imada, Masafumi Nagai, Yoshihiko Nakata, Takaaki Aoki, Jiro Matsuo, Nobutsugu Imanishi,