کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818380 | 1518780 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular dynamics simulation of silicon nanostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
A silicon nanowire can be seen as a very small stick taken out of a bulk structure. Recent works show that they can be synthesized experimentally. This work initiates a series of Molecular Dynamics simulation studies of such structures. The first step towards this goal is the choice of the potential best suited to represent the physics of such a system. We have compared the two most popular potentials for bulk silicon: Stillinger-Weber and Tersoff. Our calculations show that the latter potential seem to represent better the reconstruction of the nanowire surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 37-40
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 37-40
نویسندگان
Cássio Stein Moura, Livio Amaral,