کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818390 | 1518780 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Atomic-scale modeling of clear band formation in FCC metals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Molecular Dynamics simulations are employed to simulate at the atomic scale the interactions between dislocations and several irradiation defects in FCC crystals: glissile interstitial loops, stacking fault tetrahedra and interstitial Frank loops. The simulations reveal different interaction mechanisms (absorption, unfaulting and shear), depending on the nature and shape of the defects and show that athermal cross-slip events are systematically involved when screw dislocations are considered. In the case of Frank loops, the classical unfaulting mechanism is observed but is not the general rule, defect shearing being more frequent than usually assumed. Consequences of these observations on clear band formation are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 100-110
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 100-110
نویسندگان
David Rodney,