کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818415 | 1518780 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Coupled BC/kLMC simulations of the temperature dependence of implant damage formation in silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
We use coupled binary collision (BC) and kinetic lattice Monte Carlo (kLMC) simulations to investigate the temperature dependence of implantation damage around room temperature and below, and the difference between dynamic annealing during the implant and post-implant annealing. Based on our simulations we give a physical explanation of this difference. From comparison with published experimental data on 200Â keV B implants in Si we conclude that interaction radii or reaction barriers exist that favor recombination over clustering reactions. Moreover, we discuss the point defect parameters required to achieve agreement between simulation and experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 256-259
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1â4, January 2005, Pages 256-259
نویسندگان
G. Otto, D. KovaÄ, G. Hobler,