Simulation of incoherent bremsstrahlung of high energy electrons and positrons in a crystal

The simulation procedure for the intensity of incoherent radiation by the electron and positron beams in oriented crystal is developed. This procedure is based on the quasi-classical formulae of the bremsstrahlung theory. Substantial orientation dependence of the intensity of hard incoherent radiation manifests itself under the angles of incidence of electrons and positrons to one of crystallographic planes, close to the critical angle of planar channeling. It is demonstrated that the orientation dependences for the electrons and positrons substantially differ from each other. The results of simulation are in a good agreement with the experimental data.