کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9821519 1518986 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation of silicon etching through a fluorocarbon layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Simulation of silicon etching through a fluorocarbon layer
چکیده انگلیسی
Reactive ion etching (RIE) of silicon in a CF4+H2 plasma is considered by a proposed model, which includes processes of adsorption, activation, chemical reactions, relaxation, desorption, sputtering, and mixing. Transport of species through a fluorocarbon layer is explained by surface energy induced mixing. It is found that steady-state RIE rate of silicon in CF4+H2 plasma does not depend on thickness of fluorocarbon layer. The adsorption of reactive species from the plasma on the fluorocarbon layer is the etching-rate limiting process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 79, Issues 3–4, 19 August 2005, Pages 119-123
نویسندگان
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