Characterization of p-type In-Sb thin films prepared by vacuum evaporation

Thin films of InSb have been prepared onto well-cleaned glass substrates at different substrate temperatures (303, 473 and 523 K) by vacuum evaporation. The elemental composition of the deposited InSb films was evaluated by Auger electron spectroscopy (AES) and it was found to be 24% (In) and 76% (Sb). X-ray diffraction patterns indicated the polycrystalline nature of the InSb films with preferential orientation along (1 1 1) plane. Particle size (D), dislocation density (δ) and strain (ε) were determined from the XRD patterns. The particle size increases with the increase of substrate temperature, which was found to be in the range from 8.31 to 24.95 nm. In Laser Raman study, the presence of longitudinal mode (LO) confirms that the deposited films were having crystalline nature. Hall measurements indicate that the films were p-type, having carrier concentration ≅ 1016 cm−3 and mobility (1.1-6.5)×103 cm2/V s.