کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9821575 1518988 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Pressure stimulated creation of oxygen-related defects in oxygen-implanted and neutron-irradiated silicon
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Pressure stimulated creation of oxygen-related defects in oxygen-implanted and neutron-irradiated silicon
چکیده انگلیسی
The present work reports some experimental results based on capacitance measurements on float-zone silicon (Fz-Si) and Czochralski-grown silicon (Cz-Si) subjected to oxygen implantation, subsequent neutron irradiation and finally high-pressure thermal anneals. The purpose of this work was the study of the effect of irradiation on the formation of thermal acceptors and donors in silicon. We found that oxygen ion implantation followed by neutron irradiation results in shallow and deep level acceptor-like defects formation. Prolonged heat treatment leads to thermal donor generation as usual in Cz-Si annealed at 720 K. The most striking result of the study is finding that high-pressure thermal anneals result in extra donor formation even for low oxygen concentration. The effects mentioned above lead to changes in the type of conductivity (p-n junction formation) depending on oxygen content in the material, hydrostatic pressure and an extent of damage caused by the irradiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 78, Issues 2–4, 30 May 2005, Pages 199-203
نویسندگان
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