کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9821576 1518988 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ion implantation as a pre-treatment method of AlN substrate for direct bonding with copper
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Ion implantation as a pre-treatment method of AlN substrate for direct bonding with copper
چکیده انگلیسی
Ion implantation was examined as a pre-treatment procedure for AlN substrates used for direct bonding with Cu. It replaces the conventional process of thermal oxidation. Ti, Fe and O ions were used at acceleration voltages of 15 and 70 kV in the dose range between 1016 and 1018 ions/cm2. Shear strength measurements of the prepared joints have shown that the optimum results are obtained for Ti implanted at 15 kV to a dose of 5×1016 ions/cm2. The bond strength attained for such conditions exceeds that of conventionally prepared joints by a factor of 5. The morphology of fractured joints was studied by SEM and discussed in terms of changes induced by the implanted ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 78, Issues 2–4, 30 May 2005, Pages 205-209
نویسندگان
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