کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9821577 | 1518988 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-temperature annealing of electron-irradiated high-voltage diode structures on neutron transmutation-doped Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High-temperature annealing of electron-irradiated high-voltage diode structures on neutron transmutation-doped Si High-temperature annealing of electron-irradiated high-voltage diode structures on neutron transmutation-doped Si](/preview/png/9821577.png)
چکیده انگلیسی
High-voltage diode structures were fabricated in high-resistance neutron transmutation-doped (NTD) silicon and irradiated with 6 MeV electrons. A non-equilibrium minority charge carrier (NMCC) lifetime was measured in the high-resistance region of p+-n structures and deep-level transient spectroscopy (DLTS) was used to determine the concentration and energy level positions of radiation-induced defects as a function of annealing temperature in the range 300--800 °C. The results suggest that in structures of the type investigated here, defects are formed with high thermal stability up to 800 °C and with a high formation efficiency when exposed to radiation. These defects' properties as recombination centers can be used for the fabrication of fast power diodes; their incorporation into device structures should be made at the fabrication stage preceding the formation of ohmic contacts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 211-215
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 211-215
نویسندگان
F.P. Korshunov, N.E. Zhdanovich, V.I. Karas, I.G. Marchenko,