کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9821584 | 1518988 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of radiation defects in silicon at high-energy implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The processes of defect formation in silicon following high-energy ion implantation were studied using the Hall effect and IR absorption spectroscopy. Point radiation defects were found far beyond the region of typical ion projected ranges. It is suggested that the defects were formed as a result of diffusion of interstitials and vacancies from the implanted region further into the substrate. The efficiency of the formation of these defects was found to decrease with increase of the mass of implanted ions and is thought to be related to the increase in concentration of the interstitial and vacancy traps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 251-254
Journal: Vacuum - Volume 78, Issues 2â4, 30 May 2005, Pages 251-254
نویسندگان
D.I. Brinkevich, V.B. Odzhaev, V.S. Prosolovich, Yu.N. Yankovski,