Development of filtered DC metal plasma ion implantation and coating deposition methods based on high-frequency short-pulsed bias voltage application

Experimentally, it has been shown that metal plasma-based ion implantation, high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition and ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, with pulse repetition rate smoothly adjusted in the range (2-4.4)×105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor have been examined.