کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9821627 1518988 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simulation of phosphorus ions interaction with Ge(1 0 0)-2×1 surfaces
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Simulation of phosphorus ions interaction with Ge(1 0 0)-2×1 surfaces
چکیده انگلیسی
The goal of this work is the simulation of possible structures, which phosphorus ions form during adsorption on the Ge surface. Results of quantum-chemical calculations of phosphorous ions (P−, P+) adsorption on clean ordered and disordered Ge(1 0 0)-(2×1) surfaces are presented in this work. Adsorption barriers for phosphorous ions, electronic states of Ge(1 0 0)-(2×1) surface with adsorbed and implanted P ions are calculated. Comparative analysis of simulation results for clusters of various sizes is presented. Phosphorus is a typical dopant and its adsorption on Ge surface is an initial stage of diffusion into the subsurface layers of semiconductor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 78, Issues 2–4, 30 May 2005, Pages 509-513
نویسندگان
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