Monte-Carlo simulation for QDIP device design

We developed a Monte-Carlo simulation to calculate the characteristics of QDIP devices. To implement QDs into our Monte-Carlo simulation, QDs are expressed as a sort of “scattering centers”. Infrared absorption is implemented by the change of the electron emission probability out of the QD, describing the increased emission due to absorption. Using our Monte-Carlo simulation, we found that the result qualitatively agrees with other theoretical work.