کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9844912 | 1526503 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge collection properties of heavily irradiated epitaxial silicon detectors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Charge collection properties of heavily irradiated epitaxial silicon detectors Charge collection properties of heavily irradiated epitaxial silicon detectors](/preview/png/9844912.png)
چکیده انگلیسی
Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (Ï=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 1016cm-2. Charge collection for minimum ionizing electrons from a 90Sr source was measured using a charge sensitive preamplifier and a 25 ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 554, Issues 1â3, 1 December 2005, Pages 212-219
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 554, Issues 1â3, 1 December 2005, Pages 212-219
نویسندگان
G. Kramberger, V. Cindro, I. Dolenc, E. Fretwurst, G. Lindström, I. MandiÄ, M. Mikuž, M. Zavrtanik,