کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9844922 | 1526503 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photovoltaic X-ray detectors based on epitaxial GaAs structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A new type of the photovoltaic X-ray detector based on epitaxial p+-n-nâ²-n+ GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n+-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to α-particles and γ-radiation are measured. The application of X-ray detectors is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 554, Issues 1â3, 1 December 2005, Pages 314-319
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 554, Issues 1â3, 1 December 2005, Pages 314-319
نویسندگان
R.A. Achmadullin, V.V. Artemov, V.F. Dvoryankin, G.G. Dvoryankina, Yu.M. Dikaev, M.G. Ermakov, O.N. Ermakova, V.B. Chmil, A.G. Holodenko, A.A. Kudryashov, A.I. Krikunov, A.G. Petrov, A.A. Telegin, A.P. Vorobiev,