کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9845028 | 1645433 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Proton irradiation results of p+/nâ/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor-induced space charge sign inversion
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
When processing boron-doped p-type high-resistivity Czochralski Silicon (Cz-Si), the Thermal Donor (TD) generation process can be utilized in order to produce p+/nâ/n+ detectors. The last thermal process step, i.e. the sintering of aluminum, is intentionally carried out at the temperature where TDs are created. Due to the generated donors the p-type bulk will eventually be compensated to n-type bulk. With this method it is possible, with low costs and with a process of low thermal budget, to fabricate detectors with high oxygen concentration. Moreover, the full depletion voltage of detectors could be tailored between a wide range from 30 V up to almost 1000 V by changing heat treatment duration at 400-450 °C from 20 to 80 min. The Space Charge Sign Inversion (SCSI) in the TD generated devices has been verified by the Transient Current Technique (TCT). The results of 24 GeV/c proton irradiation to fluences up to 5Ã1014 p/cm2 show a very small increase of full depletion voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 43-48
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 552, Issues 1â2, 21 October 2005, Pages 43-48
نویسندگان
J. Härkönen, E. Tuovinen, P. Luukka, L. Kauppinen, Z. Li, M. Moll, A. Bates, K. Kaska,