Radiation-induced donor generation in epitaxial and Cz diodes

Thin epitaxial layers grown on Cz substrates (Epi) and high resistivity Cz diodes have been irradiated with fluences of 2×1014 cm−2 24 GeV protons. It is shown that the differences in the changes observed in the effective doping concentration (Neff) after irradiation of Epi silicon can be explained by the balance between the formation of two type of defects-a deep acceptor (the I center) and a shallow donor (the BD complex). The BD concentration in Epi material is evaluated to be ∼1.3×1012 cm−3.